发明名称 ATOMIC LAYER GROWTH DEVICE
摘要 PROBLEM TO BE SOLVED: To more easily perform the cleaning of an atomic layer growth device. SOLUTION: The upper part of a film deposition vessel 101 is provided with cleaning liquid introduction piping 110 for introducing a cleaning liquid into a film deposition chamber, and the cleaning liquid introduction piping 110 is provided with a valve 111. Further, the exhaust piping 107 is connected to cleaning liquid exhaust piping 112 in addition to the exhaust piping 108. The connection between the exhaust piping 107 and the exhaust piping 108 and the connection between the exhaust piping 107 and the cleaning liquid exhaust piping 112 are switchable by a switching valve 113. Further, by the switching valve 113, the exhaust piping 107 can be made into a state of being closed. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010209419(A) 申请公布日期 2010.09.24
申请号 JP20090057545 申请日期 2009.03.11
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 HATTORI NOZOMI;MURATA KAZUTOSHI
分类号 C23C16/44;H01L21/31 主分类号 C23C16/44
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