发明名称 METHOD OF FABRICATING SEMICONDUCTOR DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a small semiconductor display device of low power consumption and with high definition/high resolution/high image quality. SOLUTION: The semiconductor display device includes a pixel matrix circuit, a data line driver circuit and scanning line driver circuits, and these components are formed on the same substrate using a polycrystalline TFT. The method of fabricating the device including a process for promoting crystallization by a catalytic element and a process for gettering the catalytic element provides the semiconductor display device with high definition/high resolution/high image quality though it is small in size. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010212702(A) 申请公布日期 2010.09.24
申请号 JP20100091109 申请日期 2010.04.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOYAMA JUN;ONUMA HIDETO;SHIONOIRI YUTAKA;NAGAO SHO
分类号 H01L21/336;G02F1/1368;H01L21/20;H01L21/8234;H01L27/08;H01L27/088;H01L29/786 主分类号 H01L21/336
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