发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a small semiconductor display device of low power consumption and with high definition/high resolution/high image quality. SOLUTION: The semiconductor display device includes a pixel matrix circuit, a data line driver circuit and scanning line driver circuits, and these components are formed on the same substrate using a polycrystalline TFT. The method of fabricating the device including a process for promoting crystallization by a catalytic element and a process for gettering the catalytic element provides the semiconductor display device with high definition/high resolution/high image quality though it is small in size. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010212702(A) |
申请公布日期 |
2010.09.24 |
申请号 |
JP20100091109 |
申请日期 |
2010.04.12 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KOYAMA JUN;ONUMA HIDETO;SHIONOIRI YUTAKA;NAGAO SHO |
分类号 |
H01L21/336;G02F1/1368;H01L21/20;H01L21/8234;H01L27/08;H01L27/088;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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