| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which deterioration of ferroelectric capacitors due to hydrogen can be suppressed. Ž<P>SOLUTION: The semiconductor memory device includes a first interlayer film which covers transistors, first plugs which are formed in the first interlayer film and are connected with one of a source and a drain of the transistors, the ferroelectric capacitors which are formed above the first plugs and the first interlayer film, a second plug which is formed in the first interlayer film under and between the adjacent ferroelectric capacitors and is connected with the other of the source and the drain of the transistors, a first insulating film which covers the side faces of the ferroelectric capacitors, a second insulating film which further covers the first insulating film on the side faces of the ferroelectric capacitors, a second interlayer film which covers the second insulating film, a third plug which passes through the second interlayer film between the adjacent ferroelectric capacitors and is connected with the second plug. The second insulating film is formed of a material which is harder to etch than the first insulating film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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