| 摘要 |
PURPOSE: A dry etching chamber is provided to improve the uniformity of FICD by solving the unbalance of gas density which is locally generated in the chamber by changing the flow of etch gas. CONSTITUTION: An etching unit(110) is positioned on the upper side of a dry etch chamber and includes a gas inlet. A wafer(300) is positioned on the etching unit. An exhaust unit is positioned on the lower side of the etching unit in the dry etch chamber and includes a gas outlet(122). The dray etch chamber includes a separation plate(130) which is rotatably installed in a preset direction with regard to the dry etch chamber.
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