发明名称 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent lithography characteristics and obtaining a resist pattern of good shape, and a method for forming a resist pattern by using the positive resist composition. <P>SOLUTION: The positive resist composition contains a base component (A) having increased solubility to an alkali developing solution by the action of an acid, an acid generator component (B) generating an acid by exposure, and a nitrogen-containing organic compound component (D). The base component (A) contains a polymer compound (A1) that has a structural unit including -SO<SB>2</SB>- in a cyclic skeleton and includes an acid-dissociable dissolution-inhibiting group in the structure of the compound. The resist composition contains at least two kinds of the nitrogen-containing organic compound components (D). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010211043(A) 申请公布日期 2010.09.24
申请号 JP20090058181 申请日期 2009.03.11
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HIRANO ISAO
分类号 G03F7/039;C08F20/38;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址
您可能感兴趣的专利