| 摘要 |
PROBLEM TO BE SOLVED: To prevent a device fault by preventing the generation of particles. SOLUTION: In this method for manufacturing a semiconductor device, when forming a drift layer of pn parallel structure in which an n-drift region and a p-drift region increased in impurity concentration are alternately, repeatedly joined, first, a trench 4 is formed in an wafer 1 in which an n-type semiconductor is epitaxially grown on an n-type semiconductor substrate while mask oxide films remain in the outer periphery 11 and the rear side of the wafer 1. Then, after forming the trench 4, the mask oxide films coating the wafer 1 are wholly removed, and in the trench 4, a p-type semiconductor 5 is epitaxially grown while no mask oxide films remain in the outer periphery 11 and the rear side of the wafer 1. COPYRIGHT: (C)2010,JPO&INPIT
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