| 发明名称 |
METHOD OF MANUFACTURING HFET COMPOSED OF GROUP-III NITRIDE SEMICONDUCTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of easily adjusting a threshold voltage of a normally ON type HFET. Ž<P>SOLUTION: A mask 17 is formed which has such a pattern that only a region of an i-AlGaN layer 12 where a gate electrode 15 is formed is opened. The opened region of the i-AlGaN layer 12 is irradiated with CF<SB>4</SB>gas plasma to form a damage layer 16 (Fig.2(c)). The thickness of the damage layer 16 is adjusted with an irradiation time of the CF<SB>4</SB>gas plasma to adjust the substantial thickness of the i-AlGaN layer 12, thereby adjusting the threshold voltage. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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| 申请公布号 |
JP2010212495(A) |
申请公布日期 |
2010.09.24 |
| 申请号 |
JP20090058062 |
申请日期 |
2009.03.11 |
| 申请人 |
TOYODA GOSEI CO LTD |
发明人 |
SONOYAMA TAKAHIRO;IKEMOTO YOSHIHEI;OZAKI MASAYOSHI;MIWA HIROSHI |
| 分类号 |
H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/338 |
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