| 摘要 |
PURPOSE: A semiconductor memory device is provided to obtain a random write performance required by a readyboost. CONSTITUTION: First conversion from a logical address to a physical address is performed, and data is written in to a region in a first storage region specified by the first conversion. Second conversion from a logical address to a physical address which is different from the first conversion is performed, and data is written into a region in a second storage region specified by the second conversion. When the controller detects sequential writing having a predetermined length or more, it shifts to a first write mode that data is written into the first storage region. When the controller detects that a difference between a logical address at the end of a previous write operation and a logical address at the start of a subsequent write operation is not present in a predetermined range, it shifts to a second write mode that data is written into the second storage region. A controller(20) controls the entry into the first and second storage regions.
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