| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate cleaning method that is implemented with simple device configurations, and cleans a substrate having a fine pattern formed for a short time, without exerting any adverse influence on the fine pattern. Ž<P>SOLUTION: Cleaning processing on a wafer W as the substrate having the fine pattern formed on a surface is carried out through: a conveyance step of conveying the wafer W from a processing chamber for performing predetermined processing on a surface of the wafer W to a cleaning chamber for cleaning the wafer W; a cooling step of cooling the wafer W in the cleaning chamber down to predetermined temperature; and a superfluid cleaning step of supplying superfluid helium as a superfluid to the surface of the wafer W and making the superfluid helium flow out from the surface of the wafer W to flush away contaminants in the fine pattern. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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