| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode that has low-resistance ohmic property and high resistance properties with respect to acid or alkali corrosion, and to provide a method of manufacturing the devices. SOLUTION: A semiconductor device has a nitride semiconductor layer 1, and an electrode provided on the nitride semiconductor layer 1. The electrode has a first metal layer 2 provided on the nitride semiconductor layer 1, a second metal layer 3 provided on the first metal layer 2, and a third metal layer 4 provided on the second metal layer 3. The first metal layer 2 contains a metal, having adhesion with the nitride semiconductor layer 1 higher than that of the second metal layer 3. The second metal layer 3 contains a metal, having resistance lower than that of the first metal layer 2 and an ohmic property to the nitride semiconductor layer 1, and the third metal layer 4 contains a metal having a smaller ionization tendency than that of hydrogen. COPYRIGHT: (C)2010,JPO&INPIT |
