PRODUCTION METHOD OF SEMICONDUCTOR COMPOSITE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a production method of a semiconductor composite device, wherein a high-quality nitride single crystal semiconductor layer having good flatness is joined to the surface of a second substrate.

SOLUTION: The production method of the semiconductor composite device includes: a first step of forming a first nitride single crystal semiconductor layer 102 including an indium nitride layer on the surface of a base substrate 101; a second step of forming a second nitride single crystal semiconductor layer 103 on the surface of the first nitride single crystal semiconductor layer; a third step of patterning the second nitride single crystal semiconductor layer; a fourth step of forming a protective layer covering the patterned second nitride single crystal semiconductor layer 113; a fifth step of modifying the indium nitride layer into a metal indium layer by exposing the first nitride single crystal semiconductor layer to active hydrogen; a sixth step of peeling the second nitride single crystal semiconductor layer from the first substrate by etching the metal indium layer; and a seventh step of joining the peeled second nitride single crystal semiconductor layer to the surface of a second substrate.

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