| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize plasma in a plasma CVD apparatus having a structure in which an article to be treated is set at a cathode, and also to improve a film-forming rate compared to that of the conventional one. <P>SOLUTION: In the plasma CVD apparatus 10, the inner wall of a vacuum tank 12 connected to the ground potential is set at an anode and the article to be treated 16 is set at the cathode, a pulsed electric power Ep is supplied between the anode and the cathode, and thereby plasma is generated between the anode and the cathode. A DLC film is formed on the surface of the article 16 to be treated with a CVD method using the plasma. However, the function of the inner wall of the vacuum tank 12 as the anode may be lowered due to the deposition of the DLC film on the inner wall of the vacuum tank 12, which works as the anode. An anode 40 functions as another anode in place of the inner wall of the vacuum tank 12 and thereby stabilizes the plasma. In addition, a magnetic field E is applied in the vacuum tank 12 to increase plasma density and increase the film-forming rate of the DLC film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
