| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method, capable of simply manufacturing a resist pattern having a high aspect ratio. <P>SOLUTION: In a substrate unit UT including a mask pattern layer MP, a dry film DF2 is put on the mask pattern layer MP, and the dry film DF2 is left to superpose only on a first resist pattern RP1 by photolithographic process through exposure from the backside 11r of a glass substrate 11. <P>COPYRIGHT: (C)2010,JPO&INPIT |
