发明名称 FABRICATING APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that, in the conventional joining apparatus, sufficient joining has not been achieved by the oxidization of joining faces in stages on and after the flattening of an electrode and CMP (Chemical Mechanical Polishing) treatment. SOLUTION: The fabricating apparatus for fabricating a semiconductor device in which a plurality of semiconductor substrates are joined to the respective joining faces so as to be laminated, which includes: an activating apparatus in which the joining faces are activated; a joining apparatus in which the superimposed semiconductor substrates are joined at least by either pressurizing or heating; a measuring instrument in which the surface roughness of the joining faces before being joined by the joining apparatus is measured; and a control part in which control is performed to each of the activating apparatus, the joining apparatus and the measuring instrument. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010207908(A) 申请公布日期 2010.09.24
申请号 JP20090060189 申请日期 2009.03.12
申请人 NIKON CORP 发明人 MITSUISHI SO;MATSUOKA SHINGO
分类号 B23K20/00;B23K20/24;B23K101/40;H01L21/02;H01L27/00 主分类号 B23K20/00
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