| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of heat-treating a silicon wafer, the method eliminating a crystal defect of a COP etc., at a surface part of the wafer to become a device active region, generating a BMD at a bulk part with high density, and further suppressing a slip generated during an RTP. SOLUTION: In the method of heat-treating the silicon wafer obtained by slicing a silicon single-crystal ingot manufactured by a Czochralski method, a rapid heating and rapid cooling heat treatment is carried out in an oxygen-containing atmosphere under a condition in which maximum reaching temperature is equal to or higher than 1,300°C and equal to or lower than the fusion point of silicon and a temperature lowering speed from the maximum reaching temperature is 50 to 145°C/second. COPYRIGHT: (C)2010,JPO&INPIT |
