| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a PMISFET (P Channel Metal Insulator Field Effect Transistor) in a metal gate electrode having a low threshold voltage. SOLUTION: The method of manufacturing the PMISFET on a semiconductor substrate 10 includes the processes of: forming an insulating film 20 on the semiconductor substrate 10; forming an adsorption layer 110 on the insulating film 20 by exposing the semiconductor substrate 10 and insulating film 20 to gas containing a halogen compound; forming a gate electrode 40 containing metal on the adsorption layer 110 and subjecting the adsorption layer 110 and gate electrode 40 to reaction with each other to convert the adsorption layer 110 into a halogen-containing metal layer. COPYRIGHT: (C)2010,JPO&INPIT
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