| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming metallic interconnect lines which can optimize resistance with respect to electromigration. Ž<P>SOLUTION: The method of producing metallic interconnect lines includes an etching step of defining trenches on a substrate; a step of filling the trenches by using electrodeposition of metal; and further, includes a step of forming a metal infiltration layer on the trenches filled with grains of metal. The method also includes the steps of determining a first direction of the orientation of the grains along the trench and a second direction of orientation of the grains, in a direction perpendicular to the trench; determining a third direction of ion channelling in the crystal lattice of the metal; determining, at least one direction of orientation Di1 of an ion implantation beam in the metal infiltration layer; and implanting ions in the infiltration layer with an ion beam, according to one of the orientations Di1 of the ion implantation beam. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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