| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with superior photoelectric conversion efficiency. <P>SOLUTION: The photoelectric converting device 1 has a laminated structure constituted of a lower electrode 20 made principally of Mo, a photoelectric converting semiconductor layer 30, and an upper electrode 50 on a substrate 10 having an anodically oxidized film on at least one surface side of a metal base made principally of Al. The photoelectric converting device has at least one alkaline (earth) metal supply layer 60, which contains alkaline (earth) metal and supplies the alkaline (earth) metal to the photoelectric converting semiconductor layer 30 during the film formation of the photoelectric converting semiconductor layer 30, in contact with the lower electrode 20 or in the lower electrode 20. Further, the photoelectric converting device has at least one conductive diffusion prevention layer 70, which suppresses diffusion of the alkaline (earth) metal contained in the alkaline (earth) metal supply layer 60 to the side of the substrate 10, closer to the substrate 10 than to the alkaline (earth) metal supply layer 60 in contact with the lower electrode 20 and/or alkaline (earth) metal supply layer 60 or in the lower electrode 20. <P>COPYRIGHT: (C)2010,JPO&INPIT |
