| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface light emitting semiconductor laser for stabilizing polarization. SOLUTION: The surface light emitting semiconductor laser includes: an n-type GaAs substrate 100; an n-type lower DBR 102; an active region 104; a p-type current constricting layer 106; and a p-type upper DBR 108. A post P is formed from the upper DBR 108 to the lower DBR 102 on the substrate. Two recessions 110A, 110B are formed in the positions facing each other, holding an outgoing region 112 between them, in the top of the post P. Fin shapes 130 including projections/recessions are respectively formed on sidewalls on the side of the outgoing region 112 of the two recessions 110A, 110B. COPYRIGHT: (C)2010,JPO&INPIT |
