| 摘要 |
PURPOSE: A gate of a semiconductor device and a forming method thereof are provided to reduce the fault of a landing plug contact by preventing a SAC(Self Aligned Contact) failure. CONSTITUTION: A gate poly silicon layer(32) is located on the lowermost side of a gate. A tungsten silicide(33) is located on the upper side of the poly silicon layer. The gate of a semiconductor device includes a carbon nano tube(35) formed on the upper side of the tungsten silicide.
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