发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an atomic layer deposition apparatus that is cleaned easily because thin films are not formed in a wide region other than a substrate as conventionally. SOLUTION: The atomic layer deposition apparatus disposes a substrate S in a second internal space 15 within a cylindrical reactor vessel 14 provided in a first internal space 22 within a deposition vessel 12. In the reactor vessel 14, a partition board 15c for dividing a cylindrical internal space into first-layer and second-layer spaces along a cylindrical longitudinal direction is provided in a double-layer structure. A source gas supply head 20 is provided at the side of one end of the reactor vessel, and allows source gas to flow into the first-layer space in the cylindrical longitudinal direction from one end of the reactor vessel to the other end. A gas exhaust section sucks the source gas so that the source gas flows toward one end along the cylindrical longitudinal direction in the second-layer space by folding back the flow of the source gas at the other end of the reactor vessel. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010212432(A) 申请公布日期 2010.09.24
申请号 JP20090056605 申请日期 2009.03.10
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 MURATA KAZUTOSHI;MORI YASUNARI
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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