| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric element, along with a method of manufacturing the same, of large capacity, with good leak characteristic. SOLUTION: The dielectric element 10 includes a substrate 12 and a dielectric film 18 stacked on the substrate 12. In the dielectric film 18, a first dielectric layer 14 and a second dielectric layer 16 comprising columnar crystal are stacked vertically to a substrate surface, and the columnar crystals contained in respective dielectric layers are discontinuous each other at a lamination interface. Since the columnar crystals in this dielectric element 10 are discontinuous at the lamination interface, occurrence of leak current at the crystal grain boundary of the columnar crystal is suppressed for improved leak characteristic of the dielectric element 10. Further, a plurality of dielectric layers contained in the dielectric film 18 comprise columnar crystal respectively, resulting in suppressed degradation of capacity. COPYRIGHT: (C)2010,JPO&INPIT |
