| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide static random access memory cells which have a faster driving current and smaller short channel effect. Ž<P>SOLUTION: The static random access memory cells 300 contain two non-planar pass-gate transistors having one or more fins on a semiconductor substrate. Two non-planar pull-up transistors have one or more fins on the semiconductor substrate. Two non-planar pull-down transistors have one or more fins on the semiconductor substrate. A portion of a fin of the non-planar pull-up transistor is electrically connected to a portion of a fin of the non-planar pull-down transistor by assist-bars 314, 316 on the semiconductor substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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