| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type photomask blank and reflection type photomask, wherein a fine pattern can be formed without causing surface roughness of a capping film or change in film quality due to dry etching. <P>SOLUTION: The reflection type photomask blank includes a substrate, a multilayer reflective film formed on the substrate and reflecting exposure light, the capping film formed on the multilayer reflective film and protecting the multilayer reflective film, a dry etching stopper film formed on the capping film and having resistance to dry etching, an absorption film formed on the dry etching stopper film and absorbing the exposure light, and an antireflective film formed on the absorption film and preventing inspection light from being reflected. <P>COPYRIGHT: (C)2010,JPO&INPIT |
