| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of etching metal for avoiding decrease of an etching speed and increasing anisotropy even if thickness of a metal member to be etched is thick. Ž<P>SOLUTION: According to the method of etching metal, at a concentration control point 6 where a groove 3 formed in a copper substrate 2 by etching is reached to a predetermined depth, a concentration of a liquid chemical for forming an etching controlled coating by replenishing a new solution into an etching solution 4, is reduced from 1,000 ppm to 500 ppm. Thereby, when the groove formed by the etching becomes deeper than the concentration control point 6, thickness of an etching controlled coating 5 becomes thin. Therefore, when the groove by the etching becomes deeper and liquid pressure becomes difficult to be transmitted to a bottom of the groove by accumulation of the etching solution 4, thickness of the etching controlled coating 5 becomes thin, stabilization of the etching speed is attained, and distribution of amounts of side etching to a depth direction is uniformized, and the anisotropy becomes high. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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