| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current in a thin film transistor. SOLUTION: A thin film transistor such as a switch transistor 5 and a drive transistor 6 is used as a driving element. A modified conductive part 5j (6j) is modified to have conductivity when the end of a semiconductor film 5b (6b) in the thin film transistor is in contact with a metal film 9h formed by sputtering. In an EL panel 1, a part of the modified conductive part 5j (6j) is removed. Consequently, a leakage current path between a source and a drain along the end face of the semiconductor film 5b (6b) is cut off so as to further reduce a leakage current. COPYRIGHT: (C)2010,JPO&INPIT |
