发明名称 |
METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER |
摘要 |
A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably. |
申请公布号 |
WO2010034725(A3) |
申请公布日期 |
2010.09.23 |
申请号 |
WO2009EP62286 |
申请日期 |
2009.09.22 |
申请人 |
INSTITUT FUER SOLARENERGIEFORSCHUNG GMBH;HENSEN, JAN;WOLF, ANDREAS;TERHEIDEN, BARBARA |
发明人 |
HENSEN, JAN;WOLF, ANDREAS;TERHEIDEN, BARBARA |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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