发明名称 |
METHODS OF MANUFACTURING CHARGE TRAP TYPE MEMORY DEVICES |
摘要 |
Manufacturing of a charge trap type memory device can include forming a tunnel insulating layer on a substrate. A charge-trapping layer can be formed on the tunnel insulating layer. A blocking layer can be formed on the charge-trapping layer. Gate electrodes can be formed on the blocking layer and divided by a trench. A portion of the charge-trapping layer aligned with the trench may be converted into a charge-blocking pattern with a vertical side profile by an anisotropic oxidation process.
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申请公布号 |
US2010240207(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100726014 |
申请日期 |
2010.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-GEUN;AHN JAE-YOUNG;YANG JUN-KYU;SHIN DONG-WOON |
分类号 |
H01L21/8246 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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