发明名称 |
Semiconductor Die and Method of Forming Through Organic Vias Having Varying Width in Peripheral Region of the Die |
摘要 |
A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.
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申请公布号 |
US2010237471(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20090406038 |
申请日期 |
2009.03.17 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A.;DO BYUNG TAI;HUANG SHUANGWU |
分类号 |
H01L23/538;H01L21/3205;H01L21/50 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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