发明名称 |
METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON |
摘要 |
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
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申请公布号 |
US2010237272(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100774465 |
申请日期 |
2010.05.05 |
申请人 |
CHAUDHARI PRAVEEN;CHAUDHARI KARIN;CHAUDHARI ASHOK;CHAUDHARI PIA |
发明人 |
CHAUDHARI PRAVEEN;CHAUDHARI KARIN;CHAUDHARI ASHOK;CHAUDHARI PIA |
分类号 |
H01F1/04;H01L21/368 |
主分类号 |
H01F1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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