SURFACE-EMITTING SEMICONDUCTOR LASER COMPONENT HAVING A VERTICAL EMISSION DIRECTION

摘要

The invention relates to a surface-emitting semiconductor laser component having a vertical emission direction, comprising a semiconductor body which has a first resonator mirror (2), a second resonator mirror (4), and an active zone (3) suited to generate radiation. The first resonator mirror (2) comprises alternating stacked first layers (2a) having a first composition and second layers (2b) having a second composition. The first layers (2a) have oxidized regions (8a). Furthermore, at least the first layers (2a) each comprise a doping agent, wherein at least one layer (21a) of the first layers (2a) has a doping agent concentration that differs from the doping agent concentration of the other first layers (2a).