发明名称 CMOS Image Sensor Pixel With Internal Charge Amplifier
摘要 A CMOS image sensor in which each column of pixels is connected to a signal line that is coupled to a current source, and each pixel includes a charge amplifier having a common source configuration arranged such that a charge generated by its photodiode is amplified by the charge amplifier and transmitted to readout circuitry by way of the signal line. In one embodiment the charge amplifier utilizes an NMOS transistor to couple the photodiode charge in an inverted manner to the signal line while converting the charge to a voltage through a capacitor coupled between the signal line and photodiode (i.e., forming a feedback of the NMOS amplifier transistor).
申请公布号 US2010237228(A1) 申请公布日期 2010.09.23
申请号 US20090409436 申请日期 2009.03.23
申请人 TOWER SEMICONDUCTOR LTD. 发明人 RESHEF RAZ;FENIGSTEIN AMOS;LEITNER TOMER
分类号 H03F3/08;H01L27/00 主分类号 H03F3/08
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