| 摘要 |
A trench MOSFET device with embedded Schottky rectifier, gate-drain and gate-source diodes on single chip is formed with shallow trench structure to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for GS clamp diodes and avalanche protection for GD clamp diodes. More particularly, gate charge of the present semiconductor device is reduced due to the shallow trench surrounded by an additional N doped area around the bottom while keeping Rds low enough and at the same time, maintaining BV at a certain level
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