| 摘要 |
To include a memory cell array that stores therein data in a reversible manner, an antifuse circuit that stores therein data in a nonvolatile manner, a sense amplifier array that temporarily holds data that is read from the memory cell array of data to be written in the memory cell array, and a control circuit that performs a control for writing the data held in the sense amplifier array in the antifuse circuit. According to the present invention, it is not required to provide any dedicated latch circuit for each antifuse element. Therefore, a writing process of writing data in the antifuse circuit can be performed at high speed without causing an increase of the chip dimension due to a dedicated latch circuit.
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