| 摘要 |
<p>Disclosed is a semiconductor device wherein contact failure caused by an increase in the contact resistance can be suppressed. Also disclosed are a method for manufacturing the semiconductor device, and a display device. Specifically disclosed is a semiconductor device which comprises, on a substrate, a thin film diode that comprises a crystalline semiconductor layer containing a cathode region and an anode region, a cathode electrode that is connected to the cathode region, and an anode electrode that is connected to the anode region. The crystalline semiconductor layer has a first low concentration impurity region that has a lower impurity concentration than the cathode region, and the first low concentration impurity region is arranged adjacent to the cathode region. The cathode electrode is in contact with a portion of the cathode region, said portion being within 3 µm from the boundary that is in contact with the first low concentration impurity region.</p> |
