发明名称 |
METHOD FOR FABRICATING CAPACITOR |
摘要 |
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer. |
申请公布号 |
US2010240188(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100794412 |
申请日期 |
2010.06.04 |
申请人 |
KIM JIN-HYOCK;YEOM SEUNG-JIN;PARK KI-SEON;SONG HAN-SANG;KIL DEOK-SIN;ROH JAE-SUNG |
发明人 |
KIM JIN-HYOCK;YEOM SEUNG-JIN;PARK KI-SEON;SONG HAN-SANG;KIL DEOK-SIN;ROH JAE-SUNG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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