发明名称 METHOD FOR FABRICATING CAPACITOR
摘要 A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.
申请公布号 US2010240188(A1) 申请公布日期 2010.09.23
申请号 US20100794412 申请日期 2010.06.04
申请人 KIM JIN-HYOCK;YEOM SEUNG-JIN;PARK KI-SEON;SONG HAN-SANG;KIL DEOK-SIN;ROH JAE-SUNG 发明人 KIM JIN-HYOCK;YEOM SEUNG-JIN;PARK KI-SEON;SONG HAN-SANG;KIL DEOK-SIN;ROH JAE-SUNG
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址