| 摘要 |
A semiconductor memory device includes: a semiconductor substrate; a plurality of device isolation regions being disposed in an upper-layer portion of the semiconductor substrate, and dividing the upper-layer portion into a plurality of semiconductor portions extending in a first direction; a plurality of charge storage films which are disposed on one of the plurality of the semiconductor portions and spaced apart from one another in the first direction; a block insulating film disposed covering the plurality of charge storage films; and a word electrode disposed on the block insulating film for each of rows of the plurality of charge storage films arranged in a second direction intersecting the first direction, wherein the block insulating film is disposed continuously in the first direction and in the second direction.
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