发明名称 |
SURFACE PRE-TREATMENT FOR ENHANCEMENT OF NUCLEATION OF HIGH DIELECTRIC CONSTANT MATERIALS |
摘要 |
Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.
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申请公布号 |
US2010239758(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100794047 |
申请日期 |
2010.06.04 |
申请人 |
KHER SHREYAS S;HAN SHIXUE;METZNER CRAIG R |
发明人 |
KHER SHREYAS S.;HAN SHIXUE;METZNER CRAIG R. |
分类号 |
C23C16/42;C23C16/02;C23C16/40;C23C16/509;C23C16/56;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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