发明名称 |
PROCESS FOR STRIPPING PHOTORESIST AND REMOVING DIELECTRIC LINER |
摘要 |
A process of stripping a patterned photoresist layer and removing a dielectric liner includes performing an oxygen-containing plasma dry etch process and performing a fluorine-containing plasma dry etch process in the same reaction chamber at a process temperature less than 120° C.
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申请公布号 |
US2010240220(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100721961 |
申请日期 |
2010.03.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIU YI-WEI;CHIU YIH SONG;WENG TZU CHAN;HER JENG CHANG |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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