发明名称 |
METHODS FOR FORMING METAL GATE TRANSISTORS |
摘要 |
A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.
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申请公布号 |
US2010240204(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20100719532 |
申请日期 |
2010.03.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH MATT;LIN SHUN WU;OUYANG HUI |
分类号 |
H01L21/28;B08B3/00;H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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