发明名称 |
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE |
摘要 |
A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency. A thin film transistor of the present invention includes a gate electrode; and a microcrystalline silicon layer containing a microcrystalline silicon, the microcrystalline silicon layer having an upper surface and a lower surface which are parallel to a substrate surface and an end surface which extends between the upper surface and the lower surface; first and second contact layers containing impurities which are provided so as to be in contact with the microcrystalline silicon layer; a source electrode which is in contact with the first contact layer; and a drain electrode which is in contact with the second contact layer, wherein at least one of the first and second contact layers is in contact with the microcrystalline silicon layer only at the end surface without being in contact with any of the upper surface and the lower surface.
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申请公布号 |
US2010237355(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20080743059 |
申请日期 |
2008.11.10 |
申请人 |
MORIGUCHI MASAO;SAITO YUICHI;KISDARJONO HIDAYAT |
发明人 |
MORIGUCHI MASAO;SAITO YUICHI;KISDARJONO HIDAYAT |
分类号 |
H01L29/786;H01L21/336;H01L33/16 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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