发明名称 |
Vorrichtung zur Herstellung polykristallines Silizium |
摘要 |
Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm 3 or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe. |
申请公布号 |
DE60142808(D1) |
申请公布日期 |
2010.09.23 |
申请号 |
DE2001642808 |
申请日期 |
2001.05.09 |
申请人 |
TOKUYAMA CORP. |
发明人 |
WAKAMATSU, SATORU;ODA, HIROYUKI |
分类号 |
C01B33/02;B01J4/00;B01J10/00;B01J19/24;C01B33/027;C01B33/03;C01B33/035 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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