发明名称 PHOTOSENSOR AND METHOD OF MANUFACTURING THE SAME
摘要 A photosensor includes a photodiode including a semiconductor layer. The semiconductor layer is made up of an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer, for example. The photosensor further includes a transparent electrode made of a transparent conductive film, and a nitrogen-containing semiconductor layer formed between the semiconductor layer and the transparent electrode.
申请公布号 US2010237250(A1) 申请公布日期 2010.09.23
申请号 US20100724878 申请日期 2010.03.16
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 HAYASHI MASAMI
分类号 H01L27/144;G01T1/20;H01L31/101;H01L31/18 主分类号 H01L27/144
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