发明名称 SEMICONDUCTOR WAFER, SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor wafer includes a substrate, a buffer region formed on one main surface of the substrate and formed from a compound semiconductor, and a main semiconductor region formed in the buffer region and formed from a compound semiconductor, wherein the buffer region includes a first multi-layer structured buffer region and a second multi-layer structured buffer region stacked with a plurality of alternating first layers and second layers, and a single layer structured buffer region arranged between the first multi-layer structured buffer region and the second multi-layer structured buffer region, the first layer is formed from a compound semiconductor which has a lattice constant smaller than a lattice constant of a material which forms the substrate, the second layer is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the substrate and a lattice constant of a material which forms the first layer, and wherein the single layer structured buffer region is thicker than the first layer and the second layer, and is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the first layer and a lattice constant of a material which forms the second layer.
申请公布号 US2010237387(A1) 申请公布日期 2010.09.23
申请号 US20100721788 申请日期 2010.03.11
申请人 SANKEN ELECTRIC CO., LTD. 发明人 SATO KEN
分类号 H01L29/06;H01L21/20 主分类号 H01L29/06
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