| 摘要 |
The present invention is a method of manufacturing a semiconductor device, by forming a wiring on or above a wafer so that the wiring is electrically connected to a first electrode disposed on a first surface of the wafer, forming a first resin layer on or above the wafer such that the wiring is disposed between the wafer and the first resin layer, forming an opening in the first resin layer such that the opening overlaps the wiring, forming a conductive member in the opening such that the conductive member being electrically connected to the wiring, forming a second electrode on the conductive member such that the second electrode is electrically connected to the wiring via the conductive member, and separating the wafer into individual elements after the forming of the first resin layer.
|
