发明名称 |
PLASMA FILM FORMING APPARATUS |
摘要 |
An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).
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申请公布号 |
US2010236482(A1) |
申请公布日期 |
2010.09.23 |
申请号 |
US20080681090 |
申请日期 |
2008.10.14 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
KAFUKU HIDETAKA;SHIMAZU TADASHI;MATSUDA RYUICHI;MATSUKURA AKIHIKO;NISHIKAWA SEIJI |
分类号 |
C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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