| 摘要 |
1. A semiconductor storage device has a first MOS transistor connected at a first end thereof to a power supply and diode-connected; a second MOS transistor connected in parallel with the first MOS transistor; a memory cell connected between the second end of the first MOS transistor and ground, the memory cell capable of adjusting a current flowing through the memory cell; a third MOS transistor connected at a first end thereof to the power supply, and diode-connected; a fourth MOS transistor connected in parallel with the third MOS transistor; a fifth MOS transistor connected between the second end of the fourth MOS transistor and the ground and supplied at a gate thereof with the first reference voltage; and an amplifier circuit which compares the sense voltage with the comparison voltage, and which outputs a comparison result signal depending upon a result of the comparison.
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