| 摘要 |
<p>The present invention relates to a dry etching method for texturing a surface of a substrate, wherein the method comprises the steps of : a) performing a first dry etching step onto the surface of the substrate thereby forming a surface texture with spikes and valleys, the first dry etching step comprising etching the surface of the substrate in a plasma comprising fluorine (F) radicals and oxygen (O) radicals, wherein the plasma comprises an excess of oxygen (0) radicals; and b) performing a second dry etching step onto the surface texture thereby smoothening the surface texture, the second dry etching step comprising chemical isotropic etching the surface texture obtained according to step a) in a plasma comprising fluorine (F) radicals, whereby the spikes are etched substantially faster than the valleys.</p> |
