ETCHING APPARATUS, ANALYSIS APPARATUS, ETCHING TREATMENT METHOD, AND ETCHING TREATMENT PROGRAM

摘要

An etching apparatus which is able to select a small number of representative wavelengths from waveforms of many wavelengths without setting information on the substance and chemical reaction, and which is able to reduce analysis of etching data which requires many man hours and efficiently set the monitoring/supervision of etching. The etching apparatus is provided with: a lot/wafer/step-wise OES data searching/acquisition function (511) which acquires light emission intensity waveforms along a plurality of etching processing time axes; a waveform change determining function (521) which judges whether there are changes in the plurality of light emission intensity waveforms; a waveform correlation matrix calculation function (522) which calculates a correlation matrix between the light emission intensity waveforms; a waveform sorting function (523) which sorts the light emission intensity waveforms by groups; and a representative waveform selection function (524) which selects representative light emission intensity waveforms from the groups.