| 摘要 |
A method of manufacturing a semiconductor device includes, forming an isolation region defining a first region and a second region, injecting a first impurity of a first conductivity type into the first region and the second region, forming a first gate insulating film and a first gate electrode over the first region, forming a second gate insulating film and a second gate electrode over the second region, forming a first mask layer over a first portion of the second region to expose a second portion of the second region and the first region, and injecting a second impurity of the first conductivity type into the semiconductor substrate from a direction diagonal to a surface of the semiconductor substrate.
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